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2013 IEEE International Symposium on Phased Array Systems & Technology
15 - 18 October 2013 Waltham, Massachusetts USA
Tutorial: Advances in GAN Technology and Design for Active Arrays
Advances in GAN Technology and Design for Active Arrays Dr. Thomas Winslow Hittite Microwave Corporation, Roanoke, VA Abstract Gallium Nitride HEMT technology has reached the maturity where it is reliably being deployed for both military and commercial applications.  But, because of its extreme ruggedness, reliable high temperature operation, and high operational RF power density, GaN based amplifiers can offer both new capability and challenges for Phased Array Systems.  This work will present the basics of GaN technology, amplifier design methodologies and tradeoffs, and comparisons to traditional GaAs technology for use in phased array T/R modules.
Biography Thomas Winslow is currently a Principal Engineer with Hittite Microwave Corporation.  He received a Ph.D. in Electrical Engineering from North Carolina State University in 1993.  After graduating, he began working with ITT Gallium Arsenide Technology Center in Roanoke, Virginia designing complex multifunction MMICs and amplifiers.  After M/A-COM acquired the ITT FAB and design center, he began developing high voltage GaAs power amplifiers for S-Band phased array RADARs.  In 2008, he briefly joined Nitronex Corporation developing broadband GaN MMICs, but rejoined M/A-COM Technology Solutions in 2009.  In 2011, he joined Hittite, founding a design center in Roanoke, Virginia specializing in GaN based power amplifiers for military and commercial applications.
Attendees of this tutorial will also receive a hardback copy of the book “RF Power Amplifiers for Wireless Communications, 2nd Edition” by Steve Cripps